Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs

The modeling, design, and experimental evaluation of both a 400-GHz transmitter receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this article. These S-MMICs are intended for radar-based system the aforementioned operating frequency. occupies total chip area $750\times 2750\,{\mu {\rm m}^2}$ . It consists multiplier-by-four, generating fourth-harmonic WR-10 input signal, which drives WR-2.2 power amplifier. latter has an output-gate width 128 notation="LaTeX">$\mu$ m. S-MMIC, , multiplier-by-two, providing second harmonic signal local-oscillator port subsequent subharmonic mixer. radio-frequency latter, connects via Lange coupler to low-noise amplifier (LNA). All components included, processed on 35-nm notation="LaTeX">${\text{InAlAs}}/{\text{InGaAs}}$ metamorphic high-electron-mobility transistor integrated-circuit technology, utilizing two-finger transistors thin-film microstrip lines (TFMSLs). modeling approach cores respective design decisions taken listed elaborated-on work. Accompanying measurements simulations presented. individual S-MMICs, characterized results included state-of-the-art, S-MMIC based circuits band, set by LNA, one side, spanning operational 3-dB bandwidth (BW) 310 475 GHz, with peak gain 23 dB and, other final covers range 335 425 GHz peak-output 9.0 dBm accompanying transducer 11 dB. transmitter- receiver-designs represent first-time implementation mentioned technological process, solely TFMSLs, boasting integration level, frequency setting state art—to authors’ best knowledge—for all solutions terms output over BW.